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MAGNETIC DIFFERENTIAL FIELD SENSOR USING HYSTERESIS FIELD IN AMR FILMS

机译:在AMR薄膜中使用磁滞场的磁微分场传感器

摘要

A method and system for detecting a magnetic field utilizing a magnetoresistor (100) of a magnetic sensor are described herein. A normalized magnetoresistance associated with the magnetoresistor (100) can be calculated such that the magnetoresistor (100) comprises an initial magnetization direction thereof. The magnetic field is generally permitted to exceed (408) an ability of the magnetoresistor (100) to remain pointed in the initial magnetization direction, thereby enabling the magnetoresistor (100) to experience a magnetization reversal (300) thereof. The normalized resistance may be placed into a new state in response to the magnetization reversal (300) thereof, thereby permitting the normalized resistance to be utilized as a switch thereof and allowing the magnetic sensor to detect changes in the magnetic field associated with the magnetoresistor (100).
机译:本文描述了一种用于利用磁传感器的磁阻器(100)检测磁场的方法和系统。可以计算与磁阻(100)相关的归一化磁阻,使得磁阻(100)包括其初始磁化方向。通常允许磁场超过(408)磁阻器(100)保持指向初始磁化方向的能力,从而使磁阻器(100)经历其磁化反转(300)。归一化电阻可以响应于其磁化反转(300)而被置于新的状态,从而允许将归一化电阻用作其开关,并且允许磁传感器检测与磁阻相关的磁场的变化( 100)。

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