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Ferroelectric thin film processing for ferroelectric field-effect transistor
Ferroelectric thin film processing for ferroelectric field-effect transistor
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机译:铁电场效应晶体管的铁电薄膜处理
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摘要
The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.
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