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Yield based, in-line defect sampling method

机译:基于产量的在线缺陷采样方法

摘要

A test method provides a sample of wafer level defects most likely to cause yield loss on a semiconductor wafer subdivided into a plurality of integrated circuits (ICs). Defect size and location data from an inspection tool is manipulated in an algorithm based on defect sizes and geometry parameters. The defects are classified by defect size to form size based populations. The contribution of each size range of defect population to yield loss is calculated and random samples for review are selected from each defect size population. The number of samples from each size defect population is proportional to the predicted yield impact of each sample. The method is rapid and permits on-line process modification to reduce yield losses.
机译:一种测试方法提供了最有可能在细分为多个集成电路(IC)的半导体晶片上引起成品率损失的晶片级缺陷的样本。来自检查工具的缺陷尺寸和位置数据在基于缺陷尺寸和几何参数的算法中进行处理。缺陷按缺陷大小分类,以形成基于大小的总体。计算出缺陷种群每个尺寸范围对产量损失的贡献,并从每个缺陷种群中选择随机样本进行检查。每个尺寸缺陷群体的样本数量与每个样本的预期产量影响成正比。该方法是快速的并且允许在线过程修改以减少产量损失。

著录项

  • 公开/公告号US6890775B2

    专利类型

  • 公开/公告日2005-05-10

    原文格式PDF

  • 申请/专利权人 STEVEN J. SIMMONS;

    申请/专利号US20030651665

  • 发明设计人 STEVEN J. SIMMONS;

    申请日2003-08-29

  • 分类号H01L21/00;

  • 国家 US

  • 入库时间 2022-08-21 22:19:03

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