Polymerizable composition, resist and method for electron beam lithography.

• 1. 抗蚀剂用聚合物、抗蚀剂用聚合物的制造方法、抗蚀剂组合物、及形成有图案的基板的制造方法 [P] . 中国专利： CN1976962B . 2010.06.23
• 2. 抗蚀剂用聚合物、抗蚀剂用聚合物的制造方法、抗蚀剂组合物、及形成有图案的基板的制造方法 [P] . 中国专利： CN1976962A . 2007-06-06
• 3. Polymerizable composition, polymer, resist, and process for electron beam lithography [P] . 美国专利： US2004081910A1 . 2004-04-29

  机译： 可聚合组合物，聚合物，抗蚀剂和电子束光刻工艺

• 4. Polymerizable composition, polymer, resist, and process for electron beam lithography [P] . 美国专利： US6821706B2 . 2004-11-23

  机译： 可聚合组合物，聚合物，抗蚀剂和电子束光刻工艺

• 5. COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR ELECTRON BEAM OR EXTREME ULTRAVIOLET LIGHT LITHOGRAPHY, RESIST UNDERLAYER FILM FOR ELECTRON BEAM OR EXTREME ULTRAVIOLET LIGHT LITHOGRAPHY, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE [P] . WO2021193030A1 . 2021-09-30

  机译： 用于形成电子束或极端紫外光光刻的抗蚀剂底层膜的组合物，抵抗电子束或极端紫外光光刻的底层膜，以及用于制造半导体衬底的方法

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• 1. Decomposition of 1, 2, 4-trichlorobenzene by electron beams [J] . WUMinghong JIAOZheng WANGYanli GENGXiang LIZhen LUSenlin . 辐射研究与辐射工艺学报 . 2005,第2期
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