PROCESS FOR CRYSTAL GROWTH OF III-V GROUP COMPOUND SEMICONDUCTOR

摘要

A process for crystal growth of III-V groupcompound semiconductor, which comprises pyrolyzing, in agas phase, a material consisting of an organometalliccompound and/or a hydride in the presence of an organiccompound containing an oxygen atom-carbon atom directbond, used as a dopant to grow a III-V group compoundsemiconductor crystal layer containing at leastaluminum, of high electric resistance. Said process cangrow a compound semiconductor layer of high electricresistance by the use of a dopant which enables theindependent controls of oxygen concentration andaluminum concentration and which has a small effect ofoxygen remaining.