ULTRA-HIGH CURRENT DENSITY THIN-FILM SI DIODE

摘要

A combination of a thin-film µc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of µc-Si deposited the bottom metal layer; an i-layer of µc-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer; a p-layer of µc-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.