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Ultra-high current density thin-film Si diode
Ultra-high current density thin-film Si diode
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机译:超高电流密度薄膜硅二极管
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摘要
A combination of a thin-film μc-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of μc-Si deposited the bottom metal layer; an i-layer of μc-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of μc-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
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机译:薄膜μc-Si和包含a-Si:H的二极管结构的组合,其特征在于超高电流密度超过1000 A / cm 2 Sup>。设置在基板上的底部金属层;在底层金属层上沉积一层nc的μc-Si;在n层上沉积的ic层μc-Si层;在i层上沉积有a-Si:H的缓冲层,在该缓冲层上沉积有μc-Si的p层;以及沉积在p层上的顶部金属层。
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