FIELD EFFECT TRANSISTOR, ESPECIALLY A DOUBLE DIFFUSED FIELD EFFECT TRANSISTOR, AND METHOD FOR THE PRODUCTION THEREOF

摘要

The invention relates to, amongst other things, a field effect transistor (10) wherein a control area (36) and a connection area (40) are arranged in an insulation trench (34) thereof. A field effect transistor (10) with excellent electrical properties is provided by virtue of said arrangement.