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P-N HETEROJUNCTION STRUCTURE OF ZINC OXIDE-BASED NANOROD AND SEMICONDUCTOR THIN FILM, PREPARATION THEREOF, AND NANO-DEVICE COMPRISING SAME
P-N HETEROJUNCTION STRUCTURE OF ZINC OXIDE-BASED NANOROD AND SEMICONDUCTOR THIN FILM, PREPARATION THEREOF, AND NANO-DEVICE COMPRISING SAME
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机译:氧化锌基纳米薄膜和半导体薄膜的P-N异质结结构,制备及其与纳米器件的结构相同
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摘要
A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.
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