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P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same
P-n heterojuction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same
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机译:氧化锌基纳米棒和半导体薄膜的p-n异质结结构,其制备方法以及包括该结构的纳米器件
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摘要
A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.
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