Method for making silicon nanocluster monolayers in silicon oxide

摘要

Production of monolayers of silicon nanoclusters in silicon dioxide layers comprises irradiating a silicon dioxide layer (1) which is a few nanometers to 100 nm thick on silicon substrate (2) with ions (3), preferably oxygen, silicon or germanium ions having an energy of 10 keV-10 MeV and an ion dose of 1015 to 1018 cm-2 at a silicon dioxide layer temperature of 300-800 degrees C. Preferred Features: The silicon dioxide layer is irradiated with silicon ions consisting of the same atomic weight as the atoms of the silicon substrate.