Process for the production of monolayers from silicon nanoclusters in silicon dioxide

摘要

The object of the invention is to provide a method which allows the production of nanoclusters for charge carrier storage in silicon dioxide at a specific distance from the silicon dioxide / silicon interface with ideally unimodal size distribution and arranged in a monolayer without additional substances from outside the silicon dioxide layer must be introduced. DOLLAR A According to the invention the object is achieved in that a silicon dioxide layer on a silicon substrate is irradiated with high-energy ions at a temperature which is generally higher than room temperature, but is below a critical temperature Tc, and a monolayer in the silicon dioxide by ion beam mixing of the region near the surface is generated from silicon nanoclusters. The silicon dioxide layer can be covered by one or more layers.