METHOD FOR THE EPITAXIAL DEPOSITION OF AN SI-BASED MATERIAL ON A LAYER OF SI-BASED MATERIAL BELONGING TO A SEMICONDUCTOR-ON-INSULATOR-TYPE SUBSTRATE

摘要

The invention relates to a method for the epitaxial deposition of a silicon-based material on a silicon-based layer belonging to an ultrathin semiconductor-on-insulator-type substrate. The inventive method consists of a phase comprising the annealing of the substrate, followed by a phase comprising the growth of the silicon-based material. The annealing phase is performed at an annealing temperature that is essentially less than or equal to 700 °C if the silicon-based layer of the substrate is delimited or at an annealing temperature that is essentially less than or equal to 800 °C if the silicon-based layer of the substrate comprises a whole wafer. Moreover, the growth phase is performed, at least at the start, at a growth temperature that is essentially less than or equal to 750 °C if the silicon-based layer of the substrate is delimited or at a growth temperature that is essentially less than or equal to 775 °C if the silicon-based layer of the substrate comprises a whole wafer. The invention is suitable for the production of electronic components.