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PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS
PROCESS FOR ETCHING DIELECTRIC FILMS WITH IMPROVED RESIST AND/OR ETCH PROFILE CHARACTERISTICS
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机译:具有改进的电阻和/或蚀刻轮廓特征的介电膜蚀刻工艺
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摘要
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x1, y1, and z0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x1 and y4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.
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机译:蚀刻介电层中的开口的方法包括在等离子蚀刻反应器中支撑半导体衬底,该衬底具有介电层和在介电层上方的图案化的光致抗蚀剂和/或硬掩模层。向等离子体蚀刻反应器中提供一种蚀刻剂气体,该蚀刻剂气体包括(a)碳氟化合物气体(C x Sub> F y Sub> H z Sub>,其中x1,y1,和z0),(b)含硅烷的气体,氢气或碳氢化合物气体(C x Sub> H y Sub>,其中x1和y4),(c)可选的氧气(d)任选的惰性气体,其中含硅烷的气体与碳氟化合物气体的流量比小于或等于0.1,或者氢或碳氢化合物气体与碳氟化合物气体的流量比为小于或等于0.5;将蚀刻剂气体激发成等离子体;在电介质层中的等离子体蚀刻开口具有增强的光致抗蚀剂/硬掩模,以提高电介质层的选择性和/或最小化光致抗蚀剂的变形或条纹。
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