METHOD FOR PRODUCING A WAVEGUIDE STRUCTURE IN A SURFACE-EMITTING SEMICONDUCTOR LASER AND SURFACE-EMITTING SEMICONDUCTOR LASER

摘要

A process for the preparation of a waveguide structure in a surface-emitting semiconductor laser with a pn - transition active zone (3) surrounded by a first n - doped semiconductor layer (2) and at least one p - doped semiconductor layer (4, 5), and with a tunnel contact (7) on the p - side of the active zone (3) which is connected to a second n - doped semiconductor layer (8) is adjacent, wherein in a first epitactic growth process, to the at least one p - doped semiconductor layer (4, 5), an n - doped barrier layer (6, 6a) is applied, the subsequently to the part for the formation of an aperture (10) is removed, and whereby in a second epitaxial growth process of the tunnel contact (7) for the layer provided on the barrier layer (6, 6a) as well as the aperture (10) is applied.