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Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser
Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser
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机译:在表面发射半导体激光器中制造波导结构的方法和表面发射半导体激光器
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摘要
Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties.
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