CHEMICAL-MECHANICAL POLISHING SLURRY FOR SHALLOW TRENCH ISOLATION TO IMPROVE POLISHING SELECTIVITY AND POLISHING RATE

摘要

PURPOSE: A chemical-mechanical polishing slurry for shallow trench isolation is provided to improve polishing selectivity in a silicon oxide film, polishing rate and dispersion stability of polishing grains. CONSTITUTION: The chemical-mechanical polishing slurry for shallow trench isolation comprises deionized water, a polishing grain, a pH controlling agent, a carboxylic acid-based polymeric compound and a phosphate ester type compound, wherein based on 100pts.wt of an aqueous slurry of the deionized water, the polishing grains and the pH controlling agent, 0.001-5pts.wt of the carboxylic acid-based polymeric compound is used, and 0.001-1pts.wt of the phosphate ester type compound is used, wherein the polishing grain is ceria, alumina, silica and titania.