SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CELL OF ONE-TRANSISTOR/ONE-CELL STRUCTURE FORMED ON SILICON-ON-INSULATOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage capable of a high-speed read and having memory cells of an one transistor/one memory-cell structure formed on an SOI substrate.;SOLUTION: The semiconductor storage has an element substrate having a semiconductor layer which is separated from an underlying substrate via an insulation layer and has a plurality of memory cells arranged and formed in the semiconductor layer of the element substrate. Each memory cell has a MOS-transistor structure having a floating-state body. Further, the semiconductor storage has a memory-cell array for storing data by bringing the body into a majority-carrier accumulating state, and has sensing-amplifier circuits for so reading the data of the selected memory cell of the memory-cell array as to store the data in data latches and for so transferring the read data to an output circuit as to return and write the data at the same time into the selected memory cell.;COPYRIGHT: (C)2005,JPO&NCIPI