首页> 外国专利> DELAY LOCKED LOOP OF SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY INCLUDING A CLOCK BUFFER CONTROL UNIT

DELAY LOCKED LOOP OF SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY INCLUDING A CLOCK BUFFER CONTROL UNIT

机译:同步半导体存储器的延时锁定环,特别是包括时钟缓冲器控制单元

摘要

Purpose: a delay lock loop of a synchronous semiconductor memory device is arranged to reduce unnecessary current consumption in an auto refresh mode. Construction: it includes the first and second clock buffers (31 that arithmetic register, which controls DLL (delay lock loop), 32), a clock divider (33), a phase comparator (39), a delay monitoring device, a delay model (42) and the first and second DLL drivers (40,41). Delay monitoring device also includes first and second and third delay line (34,35,36), a shift register (37), a shift controller (38), the first and second DLL drivers and a delay model. Register control DLL further comprises a clock buffer controller (53) to generate clock buffer control signal (buff_ctrl). Clock buffer controller receives an active signal, an automatic refresh signal and a clock enabling signal. Clock buffer controls signal and enables and disable the first and second clock buffers according to a mode of operation of device.
机译:目的:布置同步半导体存储器件的延迟锁定环以减少自动刷新模式下不必要的电流消耗。结构:它包括第一和第二时钟缓冲器(用于控制DLL(延迟锁定环)的算术寄存器31、32),时钟分频器(33),相位比较器(39),延迟监视设备,延迟模型(42)以及第一个和第二个DLL驱动程序(40,41)。延迟监测装置还包括第一和第二和第三延迟线(34、35、36),移位寄存器(37),移位控制器(38),第一和第二DLL驱动器以及延迟模型。寄存器控制DLL还包括时钟缓冲器控制器(53),以产生时钟缓冲器控制信号(buff_ctrl)。时钟缓冲器控制器接收活动信号,自动刷新信号和时钟使能信号。时钟缓冲器根据设备的操作模式控制信号并启用和禁用第一和第二时钟缓冲器。

著录项

  • 公开/公告号KR20040100249A

    专利类型

  • 公开/公告日2004-12-02

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030032531

  • 发明设计人 LEE JUN GEUN;

    申请日2003-05-22

  • 分类号G11C11/40;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:30

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