首页> 外国专利> METHOD OF STANDARDIZING DESIGNS AND PROCESSES FOR THICK FILM RESISTOR AND REALIZING INTEGRATED SYSTEM BETWEEN DESIGNS AND ACTUAL PROCESSES

METHOD OF STANDARDIZING DESIGNS AND PROCESSES FOR THICK FILM RESISTOR AND REALIZING INTEGRATED SYSTEM BETWEEN DESIGNS AND ACTUAL PROCESSES

机译:标准化厚膜电阻器的设计和过程的方法,以及实现设计与实际过程之间的集成系统的方法

摘要

PURPOSE: A method is provided to standardize designs and processes for the resistor and to realize an integrated system between the designs and actual processes by reflecting errors between the designs and actual processes on design formulas of the resistor. CONSTITUTION: Basic formulas for defining relations among the resistance value of a resistor, the size, the aspect ratio, and the resistivity of resistive paste are determined. A plurality of resistor patterns with different sizes are arbitrarily designed according to the basic formulas and the size and resistance value of each resistor pattern are stored(S10). A real resistor pattern with the same size as each arbitrarily designed resistor pattern is manufactured and fired(S20). A real resistance value is measured from the fired resistor pattern(S30). The deviation between the real resistance value and the designed resistance value is obtained and an error correcting coefficient is set according to the deviation(S40,S50). The error correcting coefficient is added to the basic formulas and a predetermined design formula of a thick film resistor is obtained by determining an operational relation(S60). A size of a desired thick film resistor is obtained by substituting parameters of the resistor for the design formulas and outputted(S70,S80,S90).
机译:目的:提供一种方法来标准化电阻器的设计和工艺,并通过在电阻器的设计公式上反映设计和实际工艺之间的误差来实现设计和实际工艺之间的集成系统。组成:确定电阻器电阻值,尺寸,纵横比和电阻糊剂电阻率之间关系的基本公式。根据基本公式任意设计具有不同尺寸的多个电阻器图案,并且存储每个电阻器图案的尺寸和电阻值(S10)。制造并烧制具有与每个任意设计的电阻器图案相同尺寸的真实电阻器图案(S20)。从发射的电阻器图案测量实际电阻值(S30)。获得实际电阻值与设计电阻值之间的偏差,并根据该偏差设置误差校正系数(S40,S50)。将误差校正系数添加到基本公式中,并且通过确定操作关系来获得厚膜电阻器的预定设计公式(S60)。通过将电阻器的参数代入设计公式来获得所需的厚膜电阻器的尺寸并输出(S70,S80,S90)。

著录项

  • 公开/公告号KR20040102244A

    专利类型

  • 公开/公告日2004-12-04

    原文格式PDF

  • 申请/专利权人 PARTSNIC CO. LTD.;

    申请/专利号KR20030033557

  • 发明设计人 MUN JI WON;

    申请日2003-05-27

  • 分类号H01L21/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:27

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