首页> 外国专利> FILM BULK ACOUSTIC RESONATOR HAVING SUPPORT MEMBER FORMING AIR GAP BETWEEN PIEZOELECTRIC RESONATOR STRUCTURE AND SUBSTRATE AND MANUFACTURING METHOD THEREOF

FILM BULK ACOUSTIC RESONATOR HAVING SUPPORT MEMBER FORMING AIR GAP BETWEEN PIEZOELECTRIC RESONATOR STRUCTURE AND SUBSTRATE AND MANUFACTURING METHOD THEREOF

机译:具有压电谐振器结构与其基体和制造方法之间的支持构件形成气隙的膜体声波谐振器及其制造方法

摘要

PURPOSE: A film bulk acoustic resonator having a support member and a manufacturing method thereof are provided to reduce a substrate loss by forming an air gap between a piezoelectric resonator structure and a substrate. CONSTITUTION: A film bulk acoustic resonator having a support member includes a semiconductor substrate(401), a signal line(402) formed on the semiconductor substrate, a piezoelectric resonator structure, and at least one support members(404). The piezoelectric resonator structure is spaced with a predetermined height from the semiconductor substrate and is formed by attaching a metal film used for electrodes on upper and lower portion of a piezoelectric film. The at least one support members support the piezoelectric resonator structure from the semiconductor substrate.
机译:目的:提供一种具有支撑构件的薄膜压电谐振器及其制造方法,以通过在压电谐振器结构与基板之间形成气隙来减少基板损耗。构成:一种薄膜压电谐振器,其具有支撑构件,该支撑构件包括半导体基板(401),形成在该半导体基板上的信号线(402),压电谐振器结构和至少一个支撑构件(404)。压电谐振器结构与半导体衬底隔开预定高度,并且通过将用于电极的金属膜附着在压电膜的上部和下部上而形成。至少一个支撑构件从半导体基板支撑压电谐振器结构。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号