GALLIUM NITRIDE-BASED JUNCTION STRUCTURE HAVING LOW TUNNELING POTENTIAL BARRIER

摘要

PURPOSE: A gallium nitride-based junction structure is provided to form a tunnel junction having the low tunneling potential by using the third-fourth group compound semiconductor or a Si layer. CONSTITUTION: A buffer layer(21) is formed on a substrate(20). A p-Al(x)Ga(y)In(z)N layer(22) is formed on the buffer layer. A p++-Al(x)Ga(y)In(z)N layer(23) or an ultra-grating structure layer is formed on the p-Al(x)Ga(y)In(z)N layer. The third-fourth group compound semiconductor, In(a)Ga(b)Al(c)As(d)(N)P(e) layer(24) is formed on the p++-Al(x)Ga(y)In(z)N layer. A p++-Si, n++-Al(x)Ga(y)In(z)N layer or an ultra-grating structure layer(25) is formed on the third-fourth group chemical semiconductor, In(a)Ga(b)Al(c)As(d)(N)P(e) layer. An n-Al(x)Ga(y)In(z)N layer(26) is formed on the p++-Si, n++-Al(x)Ga(y)In(z)N layer or the ultra-grating structure layer.