POSITIVE RESIST COMPOSITION HAVING BROAD EXPOSURE LATITUDE AND LOW PEB TEMPERATURE DEPENDENCY

摘要

PURPOSE: Provided is a positive photoresist composition for use in microprocessing of semiconductors, etc., which has a broad exposure latitude and defocus latitude and a low PEB(pose-exposure bake) temperature dependency. CONSTITUTION: The positive photoresist composition comprises: (A1) a resin having repeating units represented by the following formula I, whose dissolution rate in an alkali developer is increased by the action of an acid; (A2) a resin having repeating units represented by the following formula II, whose dissolution rate in an alkali developer is increased by the action of an acid; and (B) a compound generating an acid by the irradiation of active rays or radioactive rays. In formulae I and II, R represents H or CH3; A represents a single bond or linkage; ALG is an aliphatic hydrocarbon-containing group; and BLG is a catenary tertiary alkyl group.