VERTICAL CARBON NANOTUBE FET WITH MAXIMIZED FIELD EFFECT AND IMPROVED ON/OFF CURRENT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A vertical CNT(Carbon NanoTube) FET(Field Effect Transistor) and a manufacturing method thereof are provided to maximize field effect of a gate and to improve on/off current by surrounding completely a carbon nano-tube channel having a depletion layer using the gate. CONSTITUTION: A first electrode(13) is formed on a substrate(10). A CNT is vertically formed on the first electrode. A second electrode(12) is formed on the CNT. A first burial layer(31) is formed on the first electrode, A second burial layer(32) is formed under the second electrode. The first and second burial layers are spaced apart from each other. A channel portion(11) of the CNT is exposed to the outside through a space between the first and second burial layers. The channel portion includes a depletion layer. The channel portion is surrounded with a gate(20) between the first and second burial layers via a gate insulating layer(21).