首页> 外国专利> TFT PANEL AND A REPAIRING METHOD OF AN LCD INCLUDING THE SAME CAPABLE OF REPAIRING EASILY A WHITE DEFECT

TFT PANEL AND A REPAIRING METHOD OF AN LCD INCLUDING THE SAME CAPABLE OF REPAIRING EASILY A WHITE DEFECT

机译:TFT面板和LCD的修复方法,包括同样的能力,可以容易地修复白色缺陷

摘要

PURPOSE: A TFT(Thin Film Transistor) panel and a repairing method of an LCD(Liquid Crystal Display) including the same are provided to repair easily a white defect in a dependent wiring type having an independent storage capacitance wire. CONSTITUTION: A gate line(121) is formed on an insulation substrate(110) and has a gate line(123). A storage electrode wiring has a storage electrode line(131) formed on an upper portion of the substrate and separated from the gate line and a storage electrode(133) connected to the storage electrode line. A gate insulation film(140) covers the gate line and the storage capacitance wiring. A semiconductor layer(151) is formed on an upper portion of the gate insulation film of the gate electrode. A data line(171) has a source electrode crossed with the gate line and a portion of the source electrode is contacted with the semiconductor layer. A drain electrode(175) is positioned oppositely to the source electrode at the center of the gate electrode and overlapped with the storage electrode by interposing the gate insulation film. Red, green and blue color filters(230R,230G,230B) are formed on upper portions of the data line and the drain electrode, sequentially formed at a pixel region surrounded by the gate line and the data line and have an opening portion for exposing the drain electrode. A passivation film(180) covers the color filters and has contact holes(183,182) for exposing the drain electrode together with the opening portion. A pixel electrode(190) is formed on an upper portion of the passivation film and communicated with the drain electrode through the contact hole.
机译:目的:提供一种TFT(薄膜晶体管)面板和包括该TFT面板的LCD(液晶显示器)的修复方法,以容易地修复具有独立存储电容线的相关布线类型中的白色缺陷。组成:栅极线(121)形成在绝缘基板(110)上并具有栅极线(123)。存储电极布线具有形成在基板的上部且与栅极线分离的存储电极线(131)和连接至该存储电极线的存储电极(133)。栅极绝缘膜(140)覆盖栅极线和辅助电容配线。在栅电极的栅绝缘膜的上部上形成有半导体层(151)。数据线(171)具有与栅极线交叉的源电极,并且源电极的一部分与半导体层接触。漏电极(175)在栅电极的中心与源电极相对地定位,并且通过插入栅绝缘膜而与存储电极重叠。红色,绿色和蓝色滤色器(230R,230G,230B)形成在数据线和漏电极的上部,依次形成在被栅极线和数据线围绕的像素区域上,并具有用于暴露的开口部分漏电极。钝化膜(180)覆盖滤色器并具有用于将漏电极与开口部分一起暴露的接触孔(183,182)。像素电极(190)形成在钝化膜的上部,并通过接触孔与漏电极连通。

著录项

  • 公开/公告号KR20050001709A

    专利类型

  • 公开/公告日2005-01-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030041989

  • 发明设计人 KIM DONG GYU;KIM KYUNG WOOK;

    申请日2003-06-26

  • 分类号G02F1/136;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:07

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