METHOD OF FABRICATING LANDING PLUG TO SECURE BOTTOM AREA OF CONTACT HOLE AND IMPROVE CONTACT RESISTANCE

摘要

PURPOSE: A method of fabricating a landing plug is provided to improve a contact resistance characteristic by securing a bottom area of a contact hole by a cleaning process. CONSTITUTION: A conductive line is formed on a semiconductor substrate(200). An interlayer dielectric including a bottom oxide layer(240), a nitride layer, and a top oxide layer is formed on the resultant structure including the conductive line. A contact hole is formed by etching the interlayer dielectric. A bottom area of the contact hole is increased by a cleaning process. The contact hole is buried by a plug material. A polishing process is performed to expose the nitride layer.