首页> 外国专利> PLASMA SOURCE OF THREE-DIMENSIONAL STRUCTURE AND PLASMA CHAMBER USING THE SAME TO EASILY CONTROL PROCESS CHARACTERISTIC

PLASMA SOURCE OF THREE-DIMENSIONAL STRUCTURE AND PLASMA CHAMBER USING THE SAME TO EASILY CONTROL PROCESS CHARACTERISTIC

机译:三维结构的等离子体源和等离子体室,利用相同的方法易于控制过程

摘要

PURPOSE: A plasma source of a three-dimensional structure is provided to easily control a process characteristic by generating a high plasma density while generating a uniform distribution of plasma. CONSTITUTION: A plasma source receives power from a power source and generates plasma in a predetermined reaction space. A bushing pillar is vertically planted, including the first surface in its lower part and the second surface in its upper part. At least two unit coils(310,320,330) are ramified from the bushing pillar on the same horizontal surface as the second surface of the bushing pillar and is disposed as a circulated spiral type in the circumference of the second surface of the bushing pillar. The unit coils maintain a predetermined radius in a vertical direction in a position reaching the predetermined radius, extended to the same horizontal surface as the first surface.
机译:目的:提供三维结构的等离子体源,通过产生高等离子体密度同时产生均匀的等离子体分布,轻松控制工艺特性。组成:等离子体源从电源接收功率,并在预定的反应空间中产生等离子体。竖直地种植套管柱,该套管柱包括在其下部的第一表面和在其上部的第二表面。至少两个单元线圈(310,320,330)从套管柱在与套管柱的第二表面相同的水平表面上分叉,并且以循环螺旋形式设置在套管柱的第二表面的圆周中。单位线圈在到达预定半径的位置中在垂直方向上保持预定半径,并延伸到与第一表面相同的水平面。

著录项

  • 公开/公告号KR20050005346A

    专利类型

  • 公开/公告日2005-01-13

    原文格式PDF

  • 申请/专利权人 ADAPTIVE PLASMA TECHNOLOGY CORPORATION;

    申请/专利号KR20030044396

  • 发明设计人 KIM NAM HUN;

    申请日2003-07-01

  • 分类号H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:02

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