FARADAY CUP ASSEMBLY OF ION IMPLANTER FOR RESTRICTING UNDESIRED BEAM DEPOSITION PROCESS AND IMPLANTING ONLY DESIRED IONS ONTO WAFER BY CHANGING SHAPE OF SHIELD

• 1. 一种用于离子注入机靶室的法拉第系统及离子束束流品质检测的方法 [P] . 中国专利： CN103219217A . 2013-07-24
• 2. 用于离子注入器的高传输,低能量离子束管线装置和方法 [P] . 中国专利： CN1193401C . 2005.03.16
• 3. Faraday cup assembly and Faraday voltage application control method of ion implantation equipment [P] . 韩国专利： KR970052129A . 1997-07-29

  机译： 离子注入设备的法拉第杯组件及法拉第电压施加控制方法

• 4. FARADAY-CUP ASSEMBLY AND FARADAY VOLTAGE CONTROL METHOD OF ION IMPLANTER [P] . 韩国专利： KR100219400B1 . 1999-09-01

  机译： 离子注入机的法拉第杯装配及法拉第电压控制方法

• 5. Ions implantation apparatus for use during transistor manufacture, has beam parallelizer to rotate converged/diverged ion beam in synchronization with quadrupole magnet assembly, to implant ions into wafer [P] . 德国专利： DE102004063643A1 . 2006-03-23

  机译： 在晶体管制造过程中使用的离子注入设备，具有束平行器，可与四极磁体组件同步旋转会聚/发散的离子束，从而将离子注入到晶圆中

• 1. A Study on the Effect of Ion Implant to Wafer Shape and the Ion Implanter to Process the Distorted Thin SiC Wafer [C] . WeiJiang Zhao, Shiro Shiojiri, Kazuki Tobikawa, International Conference on Ion Implantation Technology . 2018
• 2. Ion implantation applications for pitting corrosion inhibition: Tungsten beam implantation of aluminum and nitrogen plasma ion implantation of 304L stainless steel. [D] . Smith, Preston Paul. 1995
• 3. The Effect of Side of Implantation on the Cortical Processing of Frequency Changes in Adult Cochlear Implant Users [O] . Chun Liang, Lisa H. Wenstrup, Ravi N. Samy, 2020
• 4. Beam test results of an ion-implanted capacitively coupled silicon strip detector processed on a 100 mm silicon wafer [O] . Hietanen, I, Lindgren, J, Orava, Risto, 1991