METHOD FOR FORMING HYDROXYL MONOLAYER ON SUBSTRATE TO MAKE SILICON WAFER COATED WITH ONLY HYDROXIDE RADICAL

摘要

PURPOSE: A method for forming a hydroxyl monolayer on a substrate is provided to make a silicon wafer coated with only a hydroxide radical by making chlorine absorbed to the surface of the silicon wafer in a high vacuum atmosphere and by replacing the chlorine with the hydroxide radical while using water. CONSTITUTION: A halogen element of a gas state is absorbed to the surface of a substrate in a high vacuum atmosphere. Water is supplied to the surface of the substrate to which a halogen element is absorbed in a high vacuum atmosphere so that the halogen element is replaced with the hydroxide radical by reaction of water molecules and the halogen element to form a hydroxyl monolayer.