首页> 外国专利> FERROELECTRIC CAPACITOR CAPABLE OF PREVENTING REDUCTION OF EFFECTIVE CAPACITANCE DUE TO PLASMA DAMAGE BY FORMING SPACER ON SIDEWALL OF UPPER ELECTRODE OF FERROELECTRIC CAPACITOR AND FABRICATING METHOD THEREOF

FERROELECTRIC CAPACITOR CAPABLE OF PREVENTING REDUCTION OF EFFECTIVE CAPACITANCE DUE TO PLASMA DAMAGE BY FORMING SPACER ON SIDEWALL OF UPPER ELECTRODE OF FERROELECTRIC CAPACITOR AND FABRICATING METHOD THEREOF

机译:通过在铁电电容器上部电极的侧壁上形成隔板来防止因等离子体损伤而导致有效电容的减小的铁电电容器及其制造方法

摘要

PURPOSE: A ferroelectric capacitor capable of preventing reduction of effective capacitance due to plasma damage and a fabricating method thereof are provided to maintain and manage stably the capacitance necessary for writing and reading data by preventing the loss of the ferroelectric capacitor. CONSTITUTION: A ferroelectric layer(35) is formed on a lower electrode(33). An upper electrode(36A) is formed on the ferroelectric layer. A spacer is formed to cover a part of a sidewall of the upper electrode and an overlapped part between an edge of the upper electrode and the ferroelectric layer. The spacer includes a first spacer(38A) for covering a part of the sidewall of the upper electrode and a second spacer(38B) formed between the first spacer and the ferroelectric layer.
机译:目的:提供一种能够防止由于等离子体损坏引起的有效电容的减小的铁电电容器及其制造方法,以通过防止铁电电容器的丢失来维持和稳定地管理用于写入和读取数据所需的电容。组成:铁电层(35)形成在下部电极(33)上。在铁电层上形成上部电极(36A)。形成间隔物以覆盖上电极的侧壁的一部分以及上电极的边缘与铁电层之间的重叠部分。隔离物包括用于覆盖上电极的侧壁的一部分的第一隔离物(38A)和形成在第一隔离物和铁电层之间的第二隔离物(38B)。

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