METHOD FOR FORMING COPPER INTERCONNECTION OF SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY OF COPPER INTERCONNECTION

摘要

A kind of purpose: method, the copper-connection for being used to form semiconductor device is arranged to improve a kind of reliability of copper-connection by preventing copper-connection from being corroded in CMP (chemical mechanical polishing) method, is used to form copper-connection in a damascene pattern. Construction: a sacrificial anode metal mode (15) is connected to the sacrificial anode junction part (12) formed on semi-conductive substrate (11), is formed. One layer insulation is formed in composite structure, including sacrificial anode metal mode. One damascene pattern is formed in layer insulation. One bronze medal Diffusion Barrier conductor layer and a layers of copper are formed in composite structure, including damascene pattern. One copper-connection is formed in damascene pattern by a CMP process.