METHOD FOR FORMING COPPER INTERCONNECTION OF SEMICONDUCTOR DEVICE TO REDUCE RESISTANCE OF COPPER INTERCONNECTION AND IMPROVE INTERVAL OF SIGNAL DELAY TIME

摘要

Purpose: a kind of method, the copper-connection for being used to form semiconductor device are arranged to reduce the resistance of a copper-connection and improve the interval formation of signal delay time to form copper Diffusion Barrier conductor layer by a MgO layers and a bronze medal-Mg alloy-layers. Construction: the substrate (11) with a damascene pattern is produced. One bronze medal-Mg alloy-layers (14) are formed along the surface of composite structure, including damascene pattern. - Mg layers of copper are heat-treated to ongoing Mg layers and under copper-Mg alloy-layers of form. MgO layer tables on copper-Mg alloy-layers are eliminated. One layers of copper is formed in copper-Mg alloy-layers to be fully filled damascene pattern. Layers of copper, copper-Mg alloy-layers and (14-1) MgO layers lower are polished to one copper-connection of form (150) in damascene pattern.