METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO PREVENT SIDEWALL FROM BEING ATTACKED BY SPUTTERING OF PLASMA IONS

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent a sidewall of a conductive layer from being attacked by sputtering of plasma ions by etching at least one of a plurality of conductive layers and by forming an oxide layer on the sidewall of a part of the etched conductive layer to etch the rest of the conductive layers. CONSTITUTION: A metal interconnection(210) composed of a plurality of conductive layers is deposited on a semiconductor structure. A photoresist material(220) is deposited and patterned on the metal interconnection. At least one of the plurality of conductive layers is etched by using the photoresist material as a mask. A sidewall oxide layer is formed on the sidewall of at least one of the etched conductive layers. The unetched conductive layer of the conductive layers constituting the metal interconnection is etched.