METHOD FOR INCREASING THICKNESS OF PHOTORESIST TO STABLY FORM PHOTORESIST OF DESIRED THICKNESS

摘要

PURPOSE: A method for increasing the thickness of photoresist is provided to stably form photoresist of a desired thickness by interposing a layer between the first photoresist layer and the second photoresist layer. CONSTITUTION: After the first photoresist is coated on a semiconductor substrate, a patterning process and an exposure process are performed. An insulation layer is deposited. After the second photoresist is coated, a patterning process and an exposure process are performed. The exposed insulation layer is etched. The first photoresist is developed. Either one of a nitride layer or an oxide layer is used as the insulation layers.