SEMICONDUCTOR DEVICE FABRICATING METHOD CAPABLE OF FORMING PHOTORESIST LAYER OF UNIFORM THICKNESS TO FORM PHOTORESIST PATTERN OF PROPER THICKNESS FUNCTIONING AS ETCH BARRIER LAYER

摘要

Purpose: semiconductor device, the method that manufacture is capable of forming a kind of photoresist layer of a uniform thickness, it is arranged and is shaped to that the photoresist mode that a defect plays a proper thickness of an etch barrier will not be generated by forming photoresist layer, when a foundation structure is shakeout. Construction: one layer be etched is formed in semi-conductive substrate, has a foundation structure (20). One hard mask layer is formed and is shakeout on layer to be etched. Photoresist (PR) is applied to the surface of hard mask layer to form a photoresist layer of a uniform thickness.