METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH POLY METAL GATE ELECTRODE TO BASICALLY PREVENT INTERFACIAL REACTION BETWEEN METAL LAYER AND POLYSILICON LAYER IN HIGH TEMPERATURE ANNEALING PROCESS

摘要

Purpose: a kind of method is provided to by executing source/drain electrode annealing process before metal layer is formed for manufacturing the semiconductor device with a poly- metal gate electrode between the metal layer and a polysilicon layer in a high-temperature annealing process and basically prevents interfacial reaction. Construction: the gate stack that wherein a gate dielectric layer (32), a polysilicon layer (33), an etch stop layer, a sacrificial layer and a dura mater are sequentially formed is formed in semi-conductive substrate (31). One gate re-ox process will carry out the gate re-ox layer (37) being formed on the side wall of polysilicon layer, etch stop layer and sacrificial layer. One sidewall spacer (39) is formed in the both sidewalls of gate stack, including gate re-ox layer. One ion implantation process and an annealing process outside in semiconductor substrate in carry out forming source region/drain region sidewall spacer. One layer insulation (41) is formed in the front surface of semiconductor substrate. Layer insulation is shakeout until the surface of the sacrificial layer among gate stack is exposed. A part, etch stop layer and the gate re-ox layer of sacrificial layer are optionally removed on the top of polysilicon layer, to form a slot. A metal layer (44) is formed in polysilicon layer for filling slot.