METHOD OF FORMING SILICIDE LAYER OF SEMICONDUCTOR DEVICE TO PREVENT LOSS OF ACTIVE REGION AND FIELD REGION IN SILICIDE LAYER REGION

摘要

PURPOSE: A method of forming a silicide layer of a semiconductor device is provided to prevent loss of an active region and a field region by forming a protective layer on a silicide layer region. CONSTITUTION: A semiconductor substrate(10) including a silicide blocking region(A) and a silicide region(B) is provided. Gate electrodes(18a,18b) and source/drain junction regions(30a,30b) are formed on the silicide blocking region and the silicide region. A protective layer is deposited along a step of the entire surface of the semiconductor substrate. A photoresist pattern is formed to cover an active region of the silicide blocking region. The protective layer of the silicide region is patterned by performing an etch process using the photoresist pattern as an etch mask. A PAI process is performed on the silicide region by using the remaining protective layer as a screen mask. The remaining protective layer is removed by a cleaning process. A silicide layer is formed on the silicide region.