METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TO PREVENT DETERIORATION OF ISOLATION CHARACTERISTIC, IMPROVE REFRESH CHARACTERISTIC, AND OPERATION SPEED

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to acquire an excellent isolation characteristic by preventing deterioration of an isolation characteristic in DRAM fabrication. CONSTITUTION: A mask pattern is formed on a semiconductor substrate(10) in order to expose a part of the semiconductor substrate. A trench is formed by etching the exposed substrate. A first oxide layer(12) is formed on a surface of the trench. A heavily doped conductive layer pattern is formed only on a bottom face of the trench. A second oxide layer is deposited to bury only the trench and an isolation layer(15) is formed on the conductive layer pattern thereby.