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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH STABLE SILICIDE LAYER ON MINIMUM INTERVAL PORTION BETWEEN POLY GATES FOR IMPROVING DESIGN RULE
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH STABLE SILICIDE LAYER ON MINIMUM INTERVAL PORTION BETWEEN POLY GATES FOR IMPROVING DESIGN RULE
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机译:在多片门之间的最小间隔部分上制造具有稳定硅化物层的半导体器件的方法,以改进设计规则
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摘要
PURPOSE: A method of manufacturing a semiconductor device is provided to improve a design rule by forming stably a silicide layer on a minimum interval portion between poly gates. CONSTITUTION: A gate oxide layer(106) and a gate electrode(108) are sequentially formed on a silicon substrate(100). A first oxide spacer(110), a nitride spacer(112) and a second oxide spacer(114) are sequentially formed at both sidewalls of the gate electrode. A first N+ source/drain ion-implantation is performed on the resultant structure by using an N+ source/drain mask. The second oxide spacer is removed by performing etching using a diluted BOE(Buffered Oxide Etchant) under the same N+ source/drain mask condition, so that a stable silicide layer is capable of being formed thereon.
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