首页> 外国专利> METHOD FOR MEASURING SELF REFRESH PERIOD OF SEMICONDUCTOR DEVICE AND ITS APPARATUS, ESPECIALLY INCLUDING AN EXTERNAL INPUT/OUTPUT PIN TO MEASURE SELF REFRESH PERIOD OF EACH BANK

METHOD FOR MEASURING SELF REFRESH PERIOD OF SEMICONDUCTOR DEVICE AND ITS APPARATUS, ESPECIALLY INCLUDING AN EXTERNAL INPUT/OUTPUT PIN TO MEASURE SELF REFRESH PERIOD OF EACH BANK

机译:一种测量半导体器件自刷新周期的方法及其装置,特别是包括一个外部输入/输出引脚以测量每个存储库的自刷新周期

摘要

PURPOSE: A method for measuring a self refresh period of a semiconductor device and its apparatus are provided to increase efficiency of testing normal operation of the memory device by measuring the self refresh period using an external input/output pin. CONSTITUTION: According to the method, the first pulse signal having the first period is generated y a self refresh command. A plurality of second pulse signals having a period larger than the first period are generated using a frequency multiplier(310) receiving the first pulse signal. One of the plurality of second pulse signals is selected. A pulse signal whose potential level varies at every one period of the selected second pulse signal is generated. And the generated pulse signal is transferred to the external through an input/output multiplexer(380) and an input/output pin(390).
机译:目的:提供一种用于测量半导体器件的自刷新周期的方法及其装置,以通过使用外部输入/输出引脚测量自刷新周期来提高测试存储器件正常工作的效率。组成:根据该方法,具有第一周期的第一脉冲信号是通过自刷新命令生成的。使用接收第一脉冲信号的倍频器(310)产生具有比第一周期大的周期的多个第二脉冲信号。选择多个第二脉冲信号之一。产生脉冲电平在所选择的第二脉冲信号的每一个周期变化的脉冲信号。并且所产生的脉冲信号通过输入/输出多路复用器(380)和输入/输出引脚(390)被传送到外部。

著录项

  • 公开/公告号KR20050011970A

    专利类型

  • 公开/公告日2005-01-31

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030051047

  • 发明设计人 LEE JONG WON;

    申请日2003-07-24

  • 分类号G11C11/407;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:53

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