SPUTTERING APPARATUS FOR SUPPRESSING TEMPERATURE INCREASE OF SUBSTRATE BY AUXILIARY ELECTRODE AND IMPROVING FORMING RATE OR QUALITY OF FILM BY CHANGING SHAPE OR ARRANGEMENT OF AUXILIARY ELECTRODE AND METHOD FOR PRODUCING COMPOUND THIN FILM

摘要

PURPOSE: To provide a box shaped facing target type sputtering apparatus capable of forming a thin film of high quality without damage on an underlying layer at low temperature, and a method capable of producing a compound thin film of high quality used in a transparent conductive film or passivation film at a low temperature. CONSTITUTION: A box shaped facing target type sputtering apparatus comprises a box shaped facing target type sputtering unit(70); and a vacuum chamber(10), wherein the sputtering unit comprises a rectangular parallelepiped frame(71) of which one surface(71f) is opened, and a pair of facing target units(100a,100b) comprising a target, and magnetic field generation means which are consisted of a permanent magnet(130a) that encircles the target, and which form a facing mode magnetic field that extends perpendicularly to the surface of the target and a magnetron mode magnetic field that extends in a direction parallel to the surface of the target, wherein the pair of facing target units installed on first opposing faces(71a,71b) of the frame formed adjacently to the opened surface, second opposing faces and other one face are shielded, the sputtering unit is installed in such a way that the opened surface faces the vacuum chamber and a substrate(20) which is disposed in the vacuum chamber, and on which a thin film is formed, and the sputtering unit further comprises an auxiliary electrode installed in a plasma confinement space(120) provided inside the sputtering unit so that the auxiliary electrode absorbs electrons.