MASK FOR EXPOSURE HAVING BLOCK AREA CONSTRUCTED FROM A PLURALITY OF PATTERN SITES COMPRISING LIGHT SCREENING PATTERN AND TRANSPARENT PATTERN, AND PREPARATION METHOD OF MASK PATTERN

摘要

PURPOSE: A mask for exposure and a method for preparing a mask pattern are provided, to allow a three dimensional shape (for example, lens) having a high precision to be produced by designing a mask pattern where the error of aperture size of a mask pattern and the error due to resist residual film characteristics are reflected in the design and preparation of a binary mask whose strength is modulated by using a 0 order light diffracted light. CONSTITUTION: The mask for exposure(M) has a block area(BA) constructed by arranging a plurality of pattern sites(PS) which comprise a light screening pattern for screening the lighting light from an exposure device and a transparent pattern for transmitting the lighting light in an equal ratio and an equal pitch, wherein the plurality of pattern sites constituting the block area is arranged to allow to the pitch of the light screening pattern to be equal to that of the transparent pattern and to allow the ratio to change slowly.