METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO PREVENT CHARACTERISTIC FROM BEING DETERIORATED BY MOAT AND AVOID INCREASE OF LEAKAGE CURRENT

摘要

Purpose: a kind of method for manufacturing semiconductor device is arranged to that a characteristic is prevented to deteriorate and avoid the increase of a leakage current by a moat, by making a liner nitride layer, white layer surround become a separation layer in the oxide layer in an isolation process. Construction: a pad nitride layer pattern formation of one pad oxide layer model of overlapping is in the first semiconductor substrate (30). First substrate is eliminated by using pad nitride layer by a specific thickness as a mask one bar ditch of formation. One oxide layer (38) is formed in composite structure. One liner nitride layer, white layer (40) is formed in oxide layer. One isolated oxide layer (42) is formed in composite structure. Isolated oxide layer, pad nitride layer and pad oxide layer is planarized to an isolated area of table filling ditch. Second semiconductor substrate (44) is bonded to the first semiconductor substrate. The bottom of first substrate is etched so that isolated area exposes.