METHOD FOR FORMING AlOxNy BUFFER LAYER FOR GROWING InAlGaN-BASED THIN FILM TO IMPROVE QUALITY OF InAlGaN-BASED THIN FILM

摘要

PURPOSE: A method for forming an AlOxNy buffer layer for growing an InAlGaN-based thin film is provided to improve the quality of an InAlGaN-based thin film by minimizing a lattice mismatch between a sapphire substrate and the InAlGaN-based thin film. CONSTITUTION: After aluminium metal is deposited on a substrate, the aluminium metal is oxidized to form an AlOx layer. A nitrogen precursor is injected to the inside of an MOCVD(metal organic chemical vapor deposition) reactor at a uniform temperature so that the AlOx layer is nitridized to form an AlOxNy layer(40) and the AlOxNy layer is used as a buffer layer for growing an InAlGaN-based thin film(50).