首页> 外国专利> METHOD FOR FABRICATING WIRE GRID POLARIZER, ESPECIALLY DEPOSITING PHOTORESIST ON BUFFER LAYER USING HMDS(HEXAMETHYLDISILAZANE)

METHOD FOR FABRICATING WIRE GRID POLARIZER, ESPECIALLY DEPOSITING PHOTORESIST ON BUFFER LAYER USING HMDS(HEXAMETHYLDISILAZANE)

机译:线栅极化剂的制备方法,特别是使用HMDS(己二甲二硅氮烷)在缓冲层上沉积光致抗蚀剂的方法

摘要

PURPOSE: A method for fabricating a wire grid polarizer is provided to produce the wire grid polarizer easily which has a fine period using a laser interference lithography, a side wall patterning technology, and an aluminum etching technology. CONSTITUTION: According to the method, a metallic thin film(210a) and an insulation layer, a buffer layer, and a photoresist are formed on a substrate(200) in sequence. A pattern(240) of a fixed period is formed with the photoresist. A buffer layer pattern is formed by etching the photoresist pattern with a mask. An insulation layer pattern is formed by etching the photoresist and the buffer layer pattern with a mask. The photoresist and the buffer layer pattern are removed. SiN(250a) is deposited on the insulation layer pattern. A SiN pattern(250b) is formed on an insulation layer pattern side wall by etching the SiN. A metallic thin film pattern is formed by removing the insulation layer pattern and etching the SiN pattern with a mask. Then the SiN pattern is removed.
机译:目的:提供一种制造线栅偏振器的方法,以利用激光干涉光刻,侧壁图案化技术和铝蚀刻技术容易地制造具有精细周期的线栅偏振器。构成:根据该方法,在基板(200)上依次形成金属薄膜(210a)和绝缘层,缓冲层和光致抗蚀剂。用光致抗蚀剂形成固定周期的图案(240)。通过用掩模蚀刻光致抗蚀剂图案来形成缓冲层图案。通过用掩模蚀刻光致抗蚀剂和缓冲层图案来形成绝缘层图案。去除光致抗蚀剂和缓冲层图案。 SiN(250a)沉积在绝缘层图案上。通过蚀刻SiN在绝缘层图案侧壁上形成SiN图案(250b)。通过去除绝缘层图案并用掩模蚀刻SiN图案来形成金属薄膜图案。然后去除SiN图案。

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