METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO REUSE DEFECTIVE SUBSTRATE AND REDUCE DEFECTIVE PROPORTION OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for fabricating a shallow trench isolation layer of a semiconductor device is provided to reuse a defective substrate and reduce a defective proportion of a semiconductor substrate by performing a gap-fill insulation deposition process after an additional deposition process of a liner insulation layer is performed to compensate to the thickness of the liner insulation layer. CONSTITUTION: A pad insulation layer(102) and a hard mask layer are sequentially formed and patterned on a semiconductor substrate(100). A predetermined depth of the semiconductor substrate exposed by the hard mask layer pattern and the pad insulation layer pattern is etched to form a trench(106). A liner insulation layer(108a) is formed on the substrate in the inner side surface of the trench. A cleaning process is performed on the resultant structure to reduce the height and the side surface of the hard mask layer pattern and the pad insulation layer pattern and to decrease the thickness of the liner insulation layer. The liner insulation layer on the inner side surface of the trench is compensated to have a predetermined thickness. A gap-fill insulation layer is formed to completely fill the trench.