ALIGN MARK FOR MEASURING OVERLAY TO IMPROVE PRECISION OF MEASURING OVERLAY

摘要

PURPOSE: An align mark for measuring an overlay is provided to improve precision of measuring an overlay by directly forming an align mark for measuring the overly on an active region and by enlarging the depth of the align mark. CONSTITUTION: An oxide layer(106) is deposited on a silicon substrate(102) having an active region(104). After the oxide layer is patterned, even the active region is etched to form a groove for an align mark so that the upper part of the silicon substrate is selectively exposed. The align mark is formed in the groove for the align mark to measure an overlay between layers of a semiconductor device.