首页> 外国专利> BULK ACOUSTIC WAVE RESONATOR WITH POLYVINYLIDENE FLUORIDE ATTACHED ON SUPPORT LAYER AND SIMPLIFIED MANUFACTURING METHOD THEREOF

BULK ACOUSTIC WAVE RESONATOR WITH POLYVINYLIDENE FLUORIDE ATTACHED ON SUPPORT LAYER AND SIMPLIFIED MANUFACTURING METHOD THEREOF

机译:附有聚偏二氟乙烯的体声波谐振器及其简化制造方法

摘要

PURPOSE: A bulk acoustic wave resonator with polyvinylidene fluoride and a manufacturing method thereof are provided to simplify manufacturing process and product structure by attaching a polyvinylidene fluoride layer on a support layer. CONSTITUTION: A bulk acoustic wave resonator includes a support layer, a ,polyvinylidene fluoride, upper and lower electrodes, and a gold wire. The support layer(6) is vaporized on a silicon substrate(2). An air gap is formed on the support layer. Upper and lower polyvinylidene fluorides(84) are attached on the support layer. Upper and lower electrodes(820,840) are attached to upper and lower surfaces of the upper and lower polyvinylidene fluoride, respectively. The gold wire(10) is attached on the upper and lower electrodes.
机译:目的:提供一种具有聚偏二氟乙烯的体声波谐振器及其制造方法,以通过将聚偏二氟乙烯层附着在支撑层上来简化制造工艺和产品结构。组成:体声波谐振器包括支撑层,聚偏二氟乙烯,上下电极以及金线。支撑层(6)在硅衬底(2)上蒸发。在支撑层上形成气隙。上部和下部聚偏二氟乙烯(84)连接在支撑层上。上下电极(820,840)分别附着在上下聚偏二氟乙烯的上下表面上。金线(10)连接在上下电极上。

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