METHOD FOR FORMING COPPER DIFFUSION PREVENTION FILM IN SEMICONDUCTOR DEVICE TO ACHIEVE GOOD DIFFUSION BARRIER AND LOW CONTACT RESISTANCE

摘要

PURPOSE: A method for forming a copper diffusion prevention film in a semiconductor device is provided to obtain a good diffusion barrier, a low contact resistance and a low stress by forming a mixed type barrier of CuN and TiN. CONSTITUTION: A glue layer of titanium is formed on a dielectric(10). A copper seed(80) is formed on the titanium glue layer by a CVD(Chemical Vapor Deposition) method. A copper of the copper seed is changed to a copper oxide(Cu2O) by an oxidation method. The copper oxide is transformed to a low density copper by a reduction method. A copper titanium alloy(CuTi) is formed on the low density copper by implanting a titanium. A mixture(70) of a copper nitride(CuN) and titanium nitride(TiN) is formed by nitridizing the copper titanium alloy. A copper is formed on the mixture(CuN/TiN).