SOC INCLUDING DRAM ANALOG DEVICE FOR IMPROVING DRAM CAPACITANCE AND FABRICATING METHOD THEREOF FOR INCREASING CAPACITANCE OF CAPACITOR USED AS UNIT CELL OF DRAM

摘要

PURPOSE: An SOC(System On Chip) including a DRAM analog device for improving a DRAM capacitance and a fabricating method thereof are provided to increase a capacitance of a capacitor per unit surface area by maximizing each surface area of a top electrode and a bottom electrode. CONSTITUTION: A lower structure(102) includes a DRAM and an analog component formed on a semiconductor substrate. A first interlayer dielectric(104) is formed on the lower structure. A first conductive layer(106) is formed on the first interlayer dielectric. A first insulating layer is formed on the first conductive layer. A second conductive layer pattern is formed on the first insulating layer. A third conductive layer(114) is formed to fill the second conductive layer pattern. A second interlayer dielectric(120) is formed to control a step of the semiconductor substrate. A top electrode metal pattern(126) is formed on the second interlayer dielectric. A bottom electrode metal pattern(124) is formed on the second interlayer dielectric.